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| Phototransistors PNZ126S Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity Good collector photo current linearity with respect to optical power input Fast response : tr = 2.5 s (typ.) Small size (o 3) ceramic package 4.10.3 2.00.2 o3.00.2 12.5 min. Absolute Maximum Ratings (Ta = 25C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 20 50 -25 to +85 -30 to +100 Unit V V mA mW C C 2 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time *1 *2 Symbol ICEO ICE(L)*3 P tr*2 tf*2 VCE = 10V Conditions VCE = 10V, L = 1000 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100 , min 1050 800 30 2.5 3.5 typ 1 U Red Color indication ICE(L) rank o0.30.05 o0.450.05 0.90.15 max 100 2560 Unit nA A nm deg. s s Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, *3 I CE(L) 50 RL Classifications Class ICE(L) (A) Color indication Q R S T 1050 to1350 1260 to 1580 1480 to 1860 1730 to 2180 2030 to 2560 Brown Yellow Pink Black 1 Phototransistors PNZ126S PC -- Ta 60 4 ICE(L) -- VCE 10 4 Ta = 25C T = 2856K ICE(L) -- L ICE(L) (A) VCE = 10V Ta = 25C T = 2856K PC (mW) 50 ICE(L) (mA) 3 L =2000 lx 1800 lx 1600 lx 10 3 Collector power dissipation 40 Collector photo current 30 2 1400 lx 1200 lx 1000 lx 800 lx Collector photo current 10 2 20 1 600 lx 400 lx 200 lx 100 lx 0 10 20 30 10 10 0 - 20 0 20 40 60 80 100 0 1 10 10 2 10 3 10 4 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICE(L) -- Ta 10 4 VCE = 10V T = 2856K L = 1500 lx 10 4 ICEO -- Ta 100 VCE = 10V 10 3 Spectral sensitivity characteristics Ta = 25C ICE(L) (A) ICEO (nA) 1000 lx 10 3 10 2 S (%) Relative sensitivity 0 20 40 60 80 100 80 Collector photo current 60 500 lx Dark current 10 40 1 10 -1 20 10 2 - 20 0 20 40 60 80 100 10 -2 - 20 0 200 400 600 800 1000 1200 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Wavelength (nm) Directivity characteristics 0 100 90 80 70 60 50 40 30 20 10 20 10 3 tr -- ICE(L) VCC = 10V Ta = 25C 10 3 tf -- ICE(L) VCC = 10V Ta = 25C Relative sensitivity S (%) 30 10 2 10 2 tr (s) 40 50 60 70 80 90 Rise time RL = 1k 500 Fall time 10 tf (s) 10 RL = 1k 500 100 1 100 1 10 -1 10 -1 1 10 10 2 10 -1 10 -1 1 10 10 2 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2 |
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